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[학술저널]

  • 학술저널

김세현(Sungkyunkwan University) 이선화(Sungkyunkwan University) 김영국(Sungkyunkwan University) 김상호(Sungkyunkwan University) 박진주(Cheongju University) 이준신(Sungkyunkwan University)

DOI : 10.7849/ksnre.2019.9.15.3.046

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초록

HIT (heterojunction with intrinsic thin-layer) solar cells are in the spotlight as ultra-high efficiency solar cells. While an a-Si: H (i) (intrinsic hydrogenated amorphous silicon) layer is important for high quality passivation layers, the TCO (transparent conductive oxide) has also become important. This paper describes the changes in the properties of ITO (indium tin oxide) in HIT solar cells. ITO is used as a TCO because of its high transmittance and conductivity at thin thickness. On the other hand, a relatively high free carrier concentration and low mobility are disadvantageous compared to other TCOs. To improve the properties of ITO, a method of diversifying the deposition process and subsequent heat treatment has been proposed. Alternatively, IZO (indium zinc oxide), IO: H (hydrogen doped indium oxide), IWO (indium tungsten oxide), and ITiO (indium titanium oxide), etc. have been used as TCOs to replace ITO.

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ABSTRACT
1. Introduction
2. HIT Solar Cell Structure
3. Indium Tin Oxide
4. Alternative TCO
5. Conclusion
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