메뉴 건너뛰기
.. 내서재 .. 알림
소속 기관/학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
로그인 회원가입 고객센터 ENG
주제분류

추천
검색
질문

논문 기본 정보

자료유형
학술저널
저자정보
Zhe Hou (Xi’an Jiaotong University) Hongjie Li (Xi’an Jiaotong University) Jing Li (Electric Power Research Institute of Guangxi Power Grid Co) Shengchang Ji (Xi’an Jiaotong University) Chenxi Huang (Xi’an Jiaotong University)
저널정보
전력전자학회 JOURNAL OF POWER ELECTRONICS JOURNAL OF POWER ELECTRONICS Vol.16 No.2
발행연도
2016.3
수록면
786 - 797 (12page)

이용수

표지
📌
연구주제
📖
연구배경
🔬
연구방법
🏆
연구결과
AI에게 요청하기
추천
검색
질문

초록· 키워드

오류제보하기
This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

목차

Abstract
I. INTRODUCTION
II. SYSTEM CONFIGURATION
III. DEVELOPMENT OF THE POWER SUPPLY SYSTEM
IV. PARASITIC EFFECT ON GATE VOLTAGE
V. APPLICATION AND EXPERIMENTAL RESULTS
VI. CONCLUSION
REFERENCES

참고문헌 (31)

참고문헌 신청

함께 읽어보면 좋을 논문

논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!

이 논문의 저자 정보

최근 본 자료

전체보기

댓글(0)

0

UCI(KEPA) : I410-ECN-0101-2016-560-002653736