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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.6
- 수록면
- 182 - 188 (7page)
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Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..
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참고문헌 (20)
참고문헌 신청
1. [학술지(정기간행물)] - Bian JM / 2004 / / Appl Phys Lett 84 : 541 ~ 543
2. [학술지(정기간행물)] - Young SJ / 2007 / / Acta Mater 55 : 329 ~ 333
3. [학술지(정기간행물)] - Jiming Bian / 2004 / / Chemical Physics Letters 393 : 256 ~ 259
4. [학술지(정기간행물)] - Manoj Kumar / 2009 / / Applied Surface Science 256 : 1329 ~ 1332
5. [학술지(정기간행물)] - S.Y. Liu / 2009 / / J. Appl. Phys 105 : 114504 ~
2. [학술지(정기간행물)] - Young SJ / 2007 / / Acta Mater 55 : 329 ~ 333
3. [학술지(정기간행물)] - Jiming Bian / 2004 / / Chemical Physics Letters 393 : 256 ~ 259
4. [학술지(정기간행물)] - Manoj Kumar / 2009 / / Applied Surface Science 256 : 1329 ~ 1332
5. [학술지(정기간행물)] - S.Y. Liu / 2009 / / J. Appl. Phys 105 : 114504 ~
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UCI(KEPA) : I410-ECN-0101-2017-056-001397385