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초록·키워드 목차

A new endurance test-pattern generation on NAND-flash memory is proposed to improve test cost. We mainly focus on the correlation between the data-pattern and the device error-rate during endurance testing. The novelty is the development of testing method using quasi-random pattern based on device architectures in order to increase the test efficiency during time-consuming endurance testing. It has been proven by the experiments using the commercial 32 nm NAND flash-memory. Using the proposed method, the error-rate increases up to 18.6% compared to that of the conventional method which uses pseudo-random pattern. Endurance testing time using the proposed quasi-random pattern is faster than that of using the conventional pseudorandom pattern since it is possible to reach the target error rate quickly using the proposed one. Accordingly, the proposed method provides more lowcost testing solutions compared to the previous pseudo-random testing patterns. #NAND flash-memory #reliability testing #quasi-random generation

Abstract
Ⅰ. INTRODUCTION
Ⅱ. CELL TO CELL INTERFERENCE
Ⅲ. NEW TEST-PATTERN GENERATION
Ⅳ. EXPERIMENTS
Ⅴ. CONCLUSIONS
REFERENCES

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