Analysis of Switching Clamped Oscillations of SiC MOSFETs

Junji Ke; Zhibin Zhao; Zongkui Xie; Changjun Wei; Xiang Cui

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자료유형: 학술저널

저자정보: Junji Ke (North China Electric Power University) Zhibin Zhao (North China Electric Power University) Zongkui Xie (North China Electric Power University) Changjun Wei (North China Electric Power University) Xiang Cui (North China Electric Power University)

저널정보: 전력전자학회 JOURNAL OF POWER ELECTRONICS JOURNAL OF POWER ELECTRONICS Vol.18 No.3

발행연도: 2018.5

수록면: 892 - 901 (10page)

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SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

#Analytical model #Current distortion #Maximum peak shifting #Oscillation frequency #Parasitic parameter #SiC MOSFET

참고문헌 (21)

참고문헌 신청

K. Sheng, Q. Guo, J. Zhang, and Z. Qian, “Development and prospect of SiC power devices in power grid,” Proc. the CSEE, Vol. 32, No. 30, pp. 1-7, Oct. 2012. D. De, A. Castellazzi, A. Solomon, A. Trentin, M. Minami, and T. Hikihara, “An all SiC MOSFET high performance PV converter cell,” in Proc. European Conference on Power Electronics and Applications (EPE), pp. 1-10, 2013. X. Wang, “Researches and applications of wide bandgap SiC power devices in electric vehicles,” Proc. the CSEE, Vol. 34, No. 3, pp. 371-379, Jan. 2014. Q. Zhu, L. Wang, L. Zhang, W. Yu, and A. Huang, “Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for solid state transformer (SST) application,” IEEE Applied Power Electronics Conference and Exposition, pp. 2365-2369, 2016. B. Callanan, “Application considerations for silicon carbide MOSFETs,” in Cree Application Note. http://www.cree.com, 2011.

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