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초록·키워드 목차

Near-infrared (NIR, 700-1400 ㎚) sensor technology has widely utilized in many fields including military, autonomous vehicle, medical equipment, and space. Si has many advantages such as relatively low material cost and perfect compatibility with CMOS technology. However, Si is not used in NIR sensor application due to its bandgap of 1.12 eV. Maximum wavelength that can be detected by material is determined by semiconductor bandgap. So the Si cannot detect light with a wavelength greater than 1100 ㎚. And the light absorption is extremely low near the bandgap. In this article, we first Investigate the effect of Si crystallinity on the sensing property of core-shell Si photodetector using crystalline silicon and polysilicon shells. In addition, to improve NIR sensing performance, a novel Si photodectector using hourglass-shaped nanowire is introduced. The proposed device exhibits similar responsivity to commercial InGaAs photodetector. Using our device, we demonstrate a heart-rate measurement system that offers performance comparable to commercial system. This review will provide the feasibility of the hourglass-shaped Si nanowire photodetector with excellent detection capability and high reliability in practical applications.<BR>This work was supported by the MSIT(Ministry of Science and ICT). Korea, under the “Nano·Material Technology Development Program” (2009-0082580) and “Development of high responsivity and high resolution silicon near-infrared sensor for autonomous vehicles using hourglass nanowire resonator structure” (NRF-2019R1C1C1005692) supervised by the NRF(National Research Foundation of Korea). We would like to thank M. Kang and S. Kim from National Institute for Nanomaterials Technology (NINT) for technical support.

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