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초록·키워드
Purpose: This study analyzed the effects of RF on the degradation of GaAs pHEMT devices by establishing correlations between RF lifetime and DC lifetime, both obtained under various current-voltage accelerated conditions. It confirmed the necessity of RF-accelerated lifetime testing in compound semiconductors.
Methods: RF-ALT and DC-ALT tests were conducted under four current-voltage conditions within the load line. Scaling factors were derived from MTTF estimates using the Arrhenius model and from changes in IV curve parameters before and after testing. RF-MTTF and DC-MTTF were plotted on Arrhenius paper to compare degradation mechanisms, which were further assessed through focused ion beam analysis post-testing. Results: RF-induced degradation was found to be complex and temperature-dependent. At 85°C, the primary factor influencing RF-induced degradation was the maximum power dissipation point, with an MTTF estimated at over 106 hours. Below 60°C, high current points had a significant impact. Cross-sectional analysis revealed voiding on the drain, source, and gate.
Conclusion: A comparison of RF-ALT and DC-ALT results for GaAs pHEMT devices revealed that RF inputs caused complex degradation mechanisms not fully observable through DC-ALT alone. This finding highlights the importance of RF-ALT in ensuring the high reliability of next-generation high-frequency, high-power compound semiconductors.
Methods: RF-ALT and DC-ALT tests were conducted under four current-voltage conditions within the load line. Scaling factors were derived from MTTF estimates using the Arrhenius model and from changes in IV curve parameters before and after testing. RF-MTTF and DC-MTTF were plotted on Arrhenius paper to compare degradation mechanisms, which were further assessed through focused ion beam analysis post-testing. Results: RF-induced degradation was found to be complex and temperature-dependent. At 85°C, the primary factor influencing RF-induced degradation was the maximum power dissipation point, with an MTTF estimated at over 106 hours. Below 60°C, high current points had a significant impact. Cross-sectional analysis revealed voiding on the drain, source, and gate.
Conclusion: A comparison of RF-ALT and DC-ALT results for GaAs pHEMT devices revealed that RF inputs caused complex degradation mechanisms not fully observable through DC-ALT alone. This finding highlights the importance of RF-ALT in ensuring the high reliability of next-generation high-frequency, high-power compound semiconductors.
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