Conventional MOSFETs have reached a physical limit with a subthreshold swing of approximately 60 mV/dec at room temperature. To overcome this, various Beyond C-MOS devices are being researched, with the feedback FET (FBFET) attracting attention due to its highly ideal subthreshold swing and high on-current. However, the FBFET operates much more sensitively compared to conventional MOSFETs. Therefore, analyzing the electrical characteristics of the device as its physical parameters are varied is crucial in FBFET research. Despite this importance, research and application of FBFETs have not yet made significant progress, and there is a lack of data analyzing the characteristic changes with parameter variations. In this study, we used a Dual-Gate FBFET to observe changes in electrical characteristics by varying the lengths of the gate and control gate, oxide and body thickness, doping concentration, and the concentration and level of interface traps. An increase in the gate and Control gate lengths led to an increase in threshold voltage, and an increase in oxide thickness also resulted in a higher threshold voltage. An increase in body thickness led to an increase in both on-current and threshold voltage, and an increase in P− and N− doping concentrations resulted in a higher threshold voltage. Additionally, the application of interface traps in the gate and control gate regions increased the threshold voltage. This study’s comparison and analysis of these simulation results confirmed that parameter changes in the gate region critically impact device operation more than changes in the control gate region. This finding highlights the need to pay closer attention to parameter variations in the gate region compared to the control gate during device design and manufacturing processes. We expect that this analysis will significantly aid further research and application of FBFET devices.