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논문 기본 정보

저자정보
(Seoul National University of Science and Technology) (Seoul National University of Science and Technology) (Seoul National University of Science and Technology) (Korea Advanced Institute of Science and Technology) (Korea Advanced Institute of Science and Technology) (Seoul National University of Science and Technology)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.25 No.1
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    초록·키워드

    To enhance the density and performance of semiconductor devices, 3D packaging with hybrid Cu bonding is emerging as a critical technology. One of the dielectrics used in hybrid Cu bonding is SiCN, typically deposited using PECVD (plasma-enhanced chemical vapor deposition). In this study, we investigated SiCN deposited at room temperature using PVD (physical vapor deposition). The SiCN, with a thickness of 150 nm, exhibited a surface roughness of 0.3-0.4 nm after the CMP (chemical mechanical polishing) process and a contact angle of about 10 degrees and dielectric constant of 3.9, indicating its potential as a dielectric for hybrid Cu bonding. And, PVD SiCN-SiCN bonding was performed at 260℃, resulting in a uniform and void-free interface.

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