메뉴 건너뛰기
소속 기관 / 학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
고객센터 ENG
주제분류

논문 기본 정보

저자정보
(Cheongju University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.25 No.6
오류 신고하기

피인용 0

검색

    초록·키워드

    This letter presents a capacitorless low-dropout (LDO) regulator with a flipped-voltage-follower (FVF) structure and segmented power cells, targeting fast transients and high power-supply-rejection (PSR). The design addresses the stability issues and bias point variations found in conventional FVF-based LDOs. Two key innovations are introduced: a cascode transistor in the fast loop to stabilize bias points, and a segmented core that extends the load current range and enhances AC performance. Additionally, this architecture enables efficient on-chip power delivery, reducing IR drop and simplifying power distribution networks. Implemented in 65-nm CMOS, the LDO operates from a 1.2-V input to a 1.0-V output, supporting a 100 mA load current. Simulations show a wideband PSR with a worst-case bound of < -14:2 dB and a transient response with undershoot and overshoot limited to 59 mV and 58 mV, respectively, for a 30 mA load step with a 10 ns edge.

    최근 본 자료 전체보기

      UCI(KEPA) : I410-151-26-02-094677688