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    초록·키워드

    The new structure of single-ended sense amplifier is designed and verified the performance by HSPICE with 0.18um CMOS standard process. Current-sensing method that detects flowing current into the bit line, is used in reading operation state of EEPROM cell. Proposed sense amplifier is not used reference cell such as usual differential sense amplifier. So, its structure is simple and it has an advantage of reducing chip size. In addition, the error of sense amplifier by noise is not happened because of the trip point sets higher than noise level in bit line by using hysteresis characteristics.

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      UCI(KEPA) : I410-ECN-0101-2014-569-001397838