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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.2 No.2
- 발행연도
- 1998.10
- 수록면
- 78 - 84 (7page)
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초록· 키워드
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ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al₂O₃. The most conductive film was obtained from the target with 2.0~2.2 wt.% of Al₂O₃. Optical properties studied with spectroscopic ellipsometry showed bandgap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. When hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental Details
Ⅲ. Results and Discussion
Ⅳ. Conclusion
Acknowledgment
References
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