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자료유형
학술저널
저자정보
저널정보
대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.1 No.2
발행연도
수록면
233 - 236 (4page)

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초록· 키워드

A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD 12; JET-X CCD) fabricated on a high-resistivity (1.5 ㏀-㎝) 65 ㎛ thick epi-layer, on a 550 ㎛ thick p? substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.
#charge coupled device #charge transfer #deep depletion #depletion depth #3-D numerical simulation
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목차

  1. Abstract
  2. 1. Introduction
  3. 2. Description of the Device
  4. 3. Results and Discussion
  5. 4. Conclusion
  6. 5. Acknowledgements
  7. References

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UCI(KEPA) : I410-ECN-0101-2009-560-019033116