메뉴 건너뛰기

추천
검색
질문

논문 기본 정보

자료유형
학술저널
저자정보
저널정보
한국표면공학회 한국표면공학회지 한국표면공학회지 제29권 제5호
발행연도
수록면
357 - 362 (6page)

이용수

표지
📌
연구주제
📖
연구배경
🔬
연구방법
이 논문의 연구방법이 궁금하신가요?
🏆
연구결과
이 논문의 연구결과가 궁금하신가요?
AI에게 요청하기
추천
검색
질문

초록· 키워드

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC))plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor ZrO₂-Y₂O₃, and high critical temperature superconductor YBa₂Cu₃O₇₋ₓ. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the “hot” clusters namely “hot cluster epitaxy (HCE)” is proposed.
상세정보 수정요청해당 페이지 내 제목·저자·목차·페이지
정보가 잘못된 경우 알려주세요!

목차

  1. ABSTRACT
  2. INTRODUCTION
  3. RF INJECTION PLASMA PROCESSING (RF-IPP) FOR DEPOSITION
  4. HOT CLUSTER EPLTAXY(HCE)
  5. SUMMARY
  6. REFERENCES

참고문헌

참고문헌 신청

최근 본 자료

전체보기
UCI(KEPA) : I410-ECN-0101-2009-581-015062952