저자의 연구 키워드

저자의 연구 키워드

#-

#111) hetero-junction

#3C-SiC

#4H-SiC

#6H-SiC

#AFM

#Al doped ZnO

#AlN

#AlN buffered PSS

#Aluminum nitride

#Al-Zn alloy

#a-Plane GaN

#Azimuth angle

#BMZN thin films

#Bonding agent

#C solubility

#CaF₂

#Carbon flow

#CGSim

#Chemical Etching

#Closed space technique)

#Contact angle

#Crystal quality

#Crystallinity

#CST

#Cubic Si

#Czochralski method

#Dielectric properties

#Direct melt oxidation

#Doping

#Edge-defined Film-Fed Growth

#EFG method

#Electrical properties

#Electron microscopy

#EPD

#Etch pit

#Etch pit density)

#Fe-doping

#Focus ring

#Gallium oxide

#Glass/Al₂O₃composites

#Graphite

#Graphite crucible

#Graphite insulation

#Green emission

#Growth pressure

#Growth rate

#Growth temperature

#Guide tube

#Halide vapor phase epitaxy (HVPE)

#Hall effects

#Hexagonal Si

#Hexagonal SiC

#HfO2

#HfOxNy

#High-k gate dielectric

#Homoepitaxial layer

#HPSI-SiC

#HVPE

#Ideality factor

#Impurity

#In doped ZnO

#Interface delamination

#Intrinsic point defects

#Lithium-ion battery

#LTCC

#MESFET

#MgZnO

#Micro-bubble

#Micropipe density)

#Mixed-source HVPE

#Mixed-source hydride vapor-phase epitaxy method

#MPD

#Multi step

#Multi-layer circuit board

#Multi-slit die

#Native oxide

#Nitrogen doping

#Non polar SiC

#Non-polar

#Numerical simulation

#Off-angle

#Ohmic contact

#Omega scan

#Optical properties

#Oxidation rate

#Oxides

#Oxygen pressure

#Patterned sapphire substrate (PSS)

#Photoluminescence

#Physical vapor transport

#Physical Vapor Transport)

#Piezoelectric

#PLD

#Polarity

#Polycrystal

#Poly-crystalline region

#Polytype

#Polytype stabilization

#Polytypes

#Porous graphite

#Properties analysis

#p-type epilayer

#Pulsed laser deposition

#PVT

#Pyrochlore

#Raman scattering spectroscopy

#Raman shift

#Raman spectroscopy

#Red shift

#Resistivity

#Ring

#Rocking curves

#Root-mean-square

#r-Plane sapphire

#Sb doped

#Schottky barrier diode

#Schottky barrier height

#Seed adhesion

#Seed orientation

#Semi-insulating

#SiC

#SiC diameter expansion

#SiC epilayer

#SiC nanostructures

#SiC powder

#Si-C reaction

#Si-doping

#Silicon carbide

#Single crystal

#Single crystal growth

#Single-crystalline region

#Sn

#Sn-doping

#Solution flow

#Solution growth

#Step-bunching

#Sublimation

#Sucrose

#Surface energy

#TaN gate electrode

#Thickness

#Transformation

#Transition metal

#Transparent conducting oxide

#TSSG

#UID

#Vanadium

#Vapor deposition

#Void

#Wetting property

#X-ray diffraction

#X-ray photoelectron spectroscopy

#ZnO nanowires

#ZnO thin films

#ZnO/Si

#β-Ga2O3

#β-Gallium oxide