메뉴 건너뛰기
소속 기관 / 학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
고객센터 ENG
주제분류

논문 기본 정보

저자정보
(Hanyang University) (Hanyang University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.18 No.3
오류 신고하기

검색

    초록·키워드

    Performance of dynamic random access memory (DRAM) has been steadily improved to overcome the concern that the DRAM access time may become the performance bottleneck of a system. Besides, DRAM power consumption has become a critical issue in mobile and server systems. The open page policy is widely used to minimize the memory access latency and the power consumption of the activate and the precharge commands. In this paper, we analyze DRAM power and performance according to memory request characteristics of applications. Especially, we observe that the row buffer access control influences the overall performance and power consumption. Further, the power-delay product (PDP) is sensitive to the row buffer hit ratio and the memory request frequency. Thus, we propose a method called dynamic row buffer access control (DRBAC) that changes the row buffer access limit dynamically based on the memory request characteristics. From simulation results, it is verified that DRBAC reduces the PDP value by up to 17.8% compared to the conventional method for various benchmarks. Therefore, we conclude that the proposed DRBAC is very effective for low power and high performance DRAM systems.

    본문·목차

    최근 본 자료 전체보기