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학술저널
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대한전자공학회 전자공학회지 전자공학회지 제18권 제4호
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초록· 키워드

A generally applicable computer simulation program for diffused silicon solar cells has been developed on the basis of the experimental results. The program can be easily used to obtain the spectral response and I-V characteristics for N+P, P+N, N+PP+, P+NN+ cells by changing various input parameters. The isolated spectra can be taken from AM1 and constant intensity and GE-ELH lamp light sources. The options for AR coating are Si₃N₄ film and materials with constant reflectance including zero reflectance for ideal case. The computer simulation demonstrates successful results compared with the measured values for the short circuit current, open circuit voltage, efficiency, spectral response, quantum efficiency, I-V characteristics, etc. This program was used to optimize doping concentration, cell thickness, light concentration, junction depth, and to obtain the limit values for front surface recombination velocity, effective carrier life time in the depletion regions and shunt resistance, and also to drive the changing rate in conversion efficiency depending on operation temperature, series resistance and electric field strength in N+ P+ bulk regions.
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UCI(KEPA) : I410-ECN-0101-2009-569-013304820