지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 1998.3
- 수록면
- 13 - 21 (9page)
이용수
초록· 키워드
오류제보하기
Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, in general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the external quantum efficiency in InGaN LEDs is as high as 9 % despite the presumably very low internal quantum efficiency.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. LIGHT - EMITTING EFFICIENCY AND ESCAPE CONE
Ⅲ. CONVENTIONAL HIGH - BRIGHTNESS LEDS
Ⅳ. INGAN HIGH - BRIGHTNESS LEDS
Ⅴ. CONCLUSION
ACKNOWLEDGMENTS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2009-425-018158972