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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- Korean Society for Precision Engineering International Journal of Precision Engineering and Manufacturing International Journal of Precision Engineering and Manufacturing Vol.10 No.1
- 발행연도
- 2009.1
- 수록면
- 23 - 28 (6page)
이용수
초록· 키워드
The polishing process for silicon wafers plays a key role in the fabrication of semiconductors, since a globally planar, mirrorlike wafer surface is achieved in the process. The surface roughness of the wafer depends on the surface properties of the carrier head unit, together with other machining conditions, such as working speed, type of polishing pad, temperature, and down force.
In this paper, the results of several experiments are used to study silicon wafer surfaces. The experiments were designed to observe the down force and temperature when a wafer carrier head unit with wafer was pressed down onto a polishing pad. A load cell was employed to detect the applied pressure against the polishing pad, and the working temperature was measured with an infrared sensor. Wafer surface roughness was investigated according to several parameters and experimental data.
상세정보 수정요청해당 페이지 내 제목·저자·목차·페이지In this paper, the results of several experiments are used to study silicon wafer surfaces. The experiments were designed to observe the down force and temperature when a wafer carrier head unit with wafer was pressed down onto a polishing pad. A load cell was employed to detect the applied pressure against the polishing pad, and the working temperature was measured with an infrared sensor. Wafer surface roughness was investigated according to several parameters and experimental data.
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목차
- 1. Introduction
- 2. The Wafer-Polishing System
- 3. Experiments
- 4. Experimental Results
- 5. Conclusions
- ACKNOWLEDGEMENT
- REFERENCES
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