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자료유형
학술저널
저자정보
저널정보
대한전기학회 JOURNAL OF KIEE JOURNAL OF KIEE Vol.1 No.1
발행연도
수록면
21 - 28 (8page)

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초록· 키워드

This paper reports the experimental results regarding to the electrical properties of undoped and doped hydrogenated amorphous silicon fabricated by the r.f.(13.56 MHz) glow discharge decomposition of silane. The dark conductivities have been measured by both sandwich and planar techniques and characterized as a function of substrate temperatures, thickness, and doping ratios, under various measuring conditions. These experimental results suggest that the conductivities obtained from sandwich technique may be more reliable than those from planar technique. It has been also attempted that the conductivity results as a function of deposition conditions are correlated with the SiH absorption obtained from infrared spectra. The photoconductivities of various types of a-Si:H films are examined as a function of incident light intensity. Temperature dependence of the conductivity has been compared for undoped and doped films respectively. The activation energies and the conductivity prefactors of those films are obtained quantitatively.
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목차

  1. Abstract
  2. 1. Introduction
  3. 2. Sample Preparations
  4. 3. Conductivity Measurement Technique of a-Si:H Thin Film
  5. 4. Experimental Results and Discussion
  6. 5. Conclusions
  7. REFERENCES

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UCI(KEPA) : I410-ECN-0101-2010-560-001675034