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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.10 No.1
- 발행연도
- 2010.3
- 수록면
- 20 - 27 (8page)
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초록· 키워드
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Modeling is essential to simulate the operation of integrated circuit (IC) before its fabrication. Seeing a large number of Metal-Oxide-Silicon Field-Effect-Transistor (MOSFET) models available, it has become important to understand them and compare them for their pros and cons. The task becomes equally difficult when the complexity of these models becomes very high. The paper reviews the mainstream models with their physical relevance and their comparisons. Major short-channel and quantum effects in the models are outlined. Emphasis is set upon the latest compact models like BSIM, MOS Models 9/11, EKV, SP etc.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ.MOSFET SCALINGREQUIREMENTS AND IMPLICATIONS
Ⅲ.MOSFETMODELS
Ⅳ. COMPARISON OF VARIOUS MOSFET MODELS
Ⅴ. QUANTUM MECHANICAL EFFECTS
Ⅵ. QUANTUM MECHANICAL MOSFET MODELING APPROACHES
Ⅶ. CONCLUSIONS
REFERENCES
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