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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.10 No.2
- 발행연도
- 2010.6
- 수록면
- 100 - 106 (7page)
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초록· 키워드
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The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. SIMULATION OF THE MOS CAPACITOR
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (10)
참고문헌 신청
1. [단행본] - Maiti CK / 2007 / Strained Si Heterostructure Field Effect Devices / Taylor and Francis
2. [인터넷자원] - / / 2007 Edition of the ITRS
3. [학술지(정기간행물)] - Stern F / 1967 / Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit / Phy. Rev 163 : 816 ~ 835
4. [학술지(정기간행물)] - Lopez-Villanuevap J A / 1997 / Effects of the inversion layer centroid on MOSFET behavior / IEEE Trans. Electron Devices 44 : 1915 ~ 1922
5. [단행본] - Y. Tsividis / 2004 / Operation and Modeling of the MOS Transistors / Oxford University Press
2. [인터넷자원] - / / 2007 Edition of the ITRS
3. [학술지(정기간행물)] - Stern F / 1967 / Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit / Phy. Rev 163 : 816 ~ 835
4. [학술지(정기간행물)] - Lopez-Villanuevap J A / 1997 / Effects of the inversion layer centroid on MOSFET behavior / IEEE Trans. Electron Devices 44 : 1915 ~ 1922
5. [단행본] - Y. Tsividis / 2004 / Operation and Modeling of the MOS Transistors / Oxford University Press
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