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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2011.7
- 수록면
- 164 - 167 (4page)
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초록· 키워드
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The developments of device structure and performance metrics of carbon nanotube Feld-effect transistors (CNTFETs) are rapidly advancing. Because of the capability of ballistic transport, CNTFETs are very attractive as high-speed transistors in highly integrated carbon nanotube (CNT) based circuits. Therefore, there is always a need for device numerical simulations. In this paper, we present results of numerical simulation of a coaxially-gated, ballistic CNTFET based on a semiclassical analytical theory, which is used to examine device performance limits. The results has been obtained by numerical methods using C++ programming.
목차
Abstract
1. Introduction
2. Approach
3. Results and discussion
4. Conclusion
5. References
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UCI(KEPA) : I410-ECN-0101-2013-004-000826896