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    초록·키워드

    A tunneling magnetoresistive(TMR)-based logic-in-memory circuit, where storage elements are distributed over a logic-circuit plane, is proposed for a low-power VLSI system. Since the TMR device is regarded as a variable resistor with a non-volatile storage capability, any logic functions between external inputs and stored inputs can be performed by using the TMR-based resistor/transistor network. The combination of a dynamic current-mode logic circuit and a TMR-based network makes it possible to perform any switching operations without steady current, which results in power saving. A design example of a full adder is discussed, and its advantages are demonstrated.

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      UCI(KEPA) : I410-ECN-0101-2013-569-001088232