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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.11 No.4
- 발행연도
- 2011.12
- 수록면
- 278 - 286 (9page)
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초록· 키워드
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In this paper, we present a compact model of gate-voltage-dependent quantum effects in shortchannel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson’"s equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (Lg) and radii (R). Schrodinger’"s equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. A MODEL FOR SHORT-CHANNEL EFFECTS
Ⅲ. A MODEL FOR QUANTUM EFFECTS
Ⅳ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (17)
참고문헌 신청
J. He / 2007 / An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body / Semicond. Sci. and Technol 22(6):671~677
A. Son / 2009 / Improved Explicit current-Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor / J. J. Appl. Phys 48:412~413
Y. Chen / 2001 / A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model / Proc. Int. Conf. Modeling Simulation of Microsystems :546~549
D. Jimenez / 2004 / Continuous analytic IV model for surrounding-gate MOSFETs / IEEE Electron Device Lett 25(8):571~573
B. Iniguez / 2005 / Explicit continuous model for long-channel undoped surrounding-gate MOSFETs / IEEE Trans. Electron. Devices 52(8):1868~1873
A. Son / 2009 / Improved Explicit current-Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor / J. J. Appl. Phys 48:412~413
Y. Chen / 2001 / A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model / Proc. Int. Conf. Modeling Simulation of Microsystems :546~549
D. Jimenez / 2004 / Continuous analytic IV model for surrounding-gate MOSFETs / IEEE Electron Device Lett 25(8):571~573
B. Iniguez / 2005 / Explicit continuous model for long-channel undoped surrounding-gate MOSFETs / IEEE Trans. Electron. Devices 52(8):1868~1873
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UCI(KEPA) : I410-ECN-0101-2013-569-001351352