인문학
사회과학
자연과학
공학
의약학
농수해양학
예술체육학
복합학
DBpia AI
AI 에이전트
AI 아이디어
AI 리더
AI 뷰어
Citeasy
크롬 서지관리 다운로드
지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록·키워드
The purpose of virtual metrology (VM) in semiconductor manufacturing is to predict every wafer’s metrological values based on its process equipment data without an actual metrology. In this paper, we propose novelty detection-based reliability estimation models for VM in order to support flexible utilization of VM results.
Because the proposed model can not only estimate the reliability of VM, but also identify suspicious process variables lowering the reliability, quality control actions can be taken selectively based on the reliance level and its causes. Based on the preliminary experimental results with actual semiconductor manufacturing process data, our models can successfully give a high reliance level to the wafers with small prediction errors and a low reliance level to the wafers with large prediction errors. In addition, our proposed model can give more detailed information by identifying the critical process variables and their relative impacts on the low reliability.
Because the proposed model can not only estimate the reliability of VM, but also identify suspicious process variables lowering the reliability, quality control actions can be taken selectively based on the reliance level and its causes. Based on the preliminary experimental results with actual semiconductor manufacturing process data, our models can successfully give a high reliance level to the wafers with small prediction errors and a low reliance level to the wafers with large prediction errors. In addition, our proposed model can give more detailed information by identifying the critical process variables and their relative impacts on the low reliability.
본문·목차
인공지능 문자 인식 모델을 통해 추출된 텍스트로, 일부 오타나 오류가 포함될 수 있으나 지속적으로 개선 중입니다.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
최근 본 자료 전체보기
UCI(KEPA) : I410-ECN-0101-2013-530-003629325
