It was investigated that nano size particles on 20nm scale pattern wafer were efficiently removed by using jet spray cleaning. In this study, deionized water and SC1 were sprayed on pattern wafer surfaces and nitrogen gas was used as carrier gas. The particle removal efficiency was evaluated by the spray height, a number of scanning, acceleration times of nozzle at wafer edge area and a kind of chemistry such as deionized water and SC1. Only deionized water was able to remove particles without surface damages but the superior particle removal was performed at sequential spray of deionized and SC1. At higher nozzle position than 45nm, slow movement on wafer edge area and at least 7 times scanning were required to get high particle removal efficiency.