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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.8 No.6
- 발행연도
- 2013.11
- 수록면
- 1,497 - 1,502 (6page)
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초록· 키워드
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Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET’s problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width (W<SUB>fin</SUB>), fin height (H<SUB>fin</SUB>), and doping concentration (D<SUB>ch</SUB>). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.
목차
Abstract
1. Introduction
2. Simulation Results
3. Conclusion
References
참고문헌 (16)
참고문헌 신청
1. [단행본] - Hong Xiao / 2001 / Introduction to Semiconductor Manufacturing Technology / Prentice Hall : 150 ~ 157
2. [학술대회논문] - Chenming Hu / 2004 / Device challenges and opportunities / in Proceeding of 2004 VLSI Symp. Tech. Dig, Hsinchu, Taiwan
3. [단행본] - Yuan Taur / 1998 / Fundamentals of Modern VLSI Devices / Cambridge University Press : 164 ~ 167
4. [학술지(정기간행물)] - Yiming Li. / 2010 / Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies / IEEE Trans. on Electron Devices 57 (2) : 437 ~ 447
5. [학술지(정기간행물)] - Jean-Pierre Colinge. / 2010 / Nanowire transistors without junctions / Nature Nanotechnology 5 (3) : 225 ~ 229
2. [학술대회논문] - Chenming Hu / 2004 / Device challenges and opportunities / in Proceeding of 2004 VLSI Symp. Tech. Dig, Hsinchu, Taiwan
3. [단행본] - Yuan Taur / 1998 / Fundamentals of Modern VLSI Devices / Cambridge University Press : 164 ~ 167
4. [학술지(정기간행물)] - Yiming Li. / 2010 / Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies / IEEE Trans. on Electron Devices 57 (2) : 437 ~ 447
5. [학술지(정기간행물)] - Jean-Pierre Colinge. / 2010 / Nanowire transistors without junctions / Nature Nanotechnology 5 (3) : 225 ~ 229
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