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논문 기본 정보

저자정보
(Sogang University) (Sogang University) (Sogang University) (Sogang University) (Sogang University) (Samsung Thales Co.) (Samsung Thales Co.) (Agency for Defense Development) (Sogang University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.2
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    초록·키워드

    This work proposes a 12b 100 MS/s 0.11 μm CMOS three-step hybrid pipeline ADC for highspeed communication and mobile display systems requiring high resolution, low power, and small size. The first stage based on time-interleaved dualchannel SAR ADCs properly handles the Nyquist-rate input without a dedicated SHA. An input sampling clock for each SAR ADC is synchronized to a reference clock to minimize a sampling-time mismatch between the channels. Only one residue amplifier is employed and shared in the proposed ADC for the first-stage SAR ADCs as well as the MDAC of back-end pipeline stages. The shared amplifier, in particular, reduces performance degradation caused by offset and gain mismatches between two channels of the SAR ADCs. Two separate reference voltages relieve a reference disturbance due to the different operating frequencies of the front-end SAR ADCs and the back-end pipeline stages. The prototype ADC in a 0.11 μm CMOS shows the measured DNL and INL within 0.38 LSB and 1.21 LSB, respectively. The ADC occupies an active die area of 1.34 mm² and consumes 25.3 mW with a maximum SNDR and SFDR of 60.2 dB and 69.5 dB, respectively, at 1.1 V and 100 MS/s.

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      UCI(KEPA) : I410-ECN-0101-2015-560-001440739