지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 IEIE Transactions on Smart Processing & Computing IEIE Transactions on Smart Processing & Computing Vol.3 No.4
- 발행연도
- 2014.10
- 수록면
- 331 - 337 (7page)
이용수
초록· 키워드
오류제보하기
Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in N2, forming gas (FG), and O₂ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the O₂-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the O₂ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.
목차
Abstract
1. Introduction
2. Experiments
3. Results and Discussion
4. Conclusion
References
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