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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
- 발행연도
- 2014.10
- 수록면
- 557 - 565 (9page)
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초록· 키워드
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We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (1120) a-plane GaN films with different SiNx interlayers. Complete SiNx coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Sidoped GaN layer was unaffected by the introduction of a SiNx interlayer. The smallest in-plane anisotropy of the (1120) XRD ω-scan widths was found in the sample with multiple SiNx layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0h0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study’s representative a-plane GaN samples were well correlated with the BSFrelated results from both the off-axis XRD ω-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTS
III. RESULTS AND DISCUSSION
V. CONCLUSIONS
REFERENCES
참고문헌 (28)
참고문헌 신청
1. [학술지(정기간행물)] - D. A. B. Miller / 1984 / Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect / Phys. Rev. Lett. 53 : 2173 ~ 2716
2. [학술지(정기간행물)] - T. Takeuchi / 1997 / Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells / Jpn. J. Appl. Phys. 36 (4A) : L382 ~ L385
3. [학술지(정기간행물)] - A. Chakraborty / 2005 / Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN / Appl. Phys. Lett. 86 (3) : 031901-1 ~ 031901-3
4. [학술지(정기간행물)] - P. Waltereit / 2000 / Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes / Nature 406 : 865 ~ 868
5. [학술지(정기간행물)] - M. D. Craven / 2002 / Structural characterization of nonpolar (11-20) a-plane GaN thin films grown on (1-102) r-plane sapphire / Appl. Phys. Lett. 81 (3) : 469 ~ 471
2. [학술지(정기간행물)] - T. Takeuchi / 1997 / Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells / Jpn. J. Appl. Phys. 36 (4A) : L382 ~ L385
3. [학술지(정기간행물)] - A. Chakraborty / 2005 / Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN / Appl. Phys. Lett. 86 (3) : 031901-1 ~ 031901-3
4. [학술지(정기간행물)] - P. Waltereit / 2000 / Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes / Nature 406 : 865 ~ 868
5. [학술지(정기간행물)] - M. D. Craven / 2002 / Structural characterization of nonpolar (11-20) a-plane GaN thin films grown on (1-102) r-plane sapphire / Appl. Phys. Lett. 81 (3) : 469 ~ 471
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