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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.2
- 발행연도
- 2015.4
- 수록면
- 223 - 231 (9page)
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초록· 키워드
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As smartphones support a variety of applications and their memory demand keeps increasing, the design of an efficient memory management policy is becoming increasingly important. Meanwhile, as nonvolatile memory (NVM) technologies such as PCM and STT-MRAM have emerged as new memory media of smartphones, characterizing memory references for NVM-based smartphone memory systems is needed. For the deep understanding of memory access features in smartphones, this paper performs comprehensive analysis of memory references for various smartphone applications. We first analyze the temporal locality and frequency of memory reference behaviors to quantify the effects of the two properties with respect to the re-reference likelihood of pages. We also analyze the skewed popularity of memory references and model it as a Zipf-like distribution. We expect that the result of this study will be a good guidance to design an efficient memory management policy for future smartphones.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. TRACE COLLECTION PROCESS
Ⅲ. ANALYSIS OF TEMPORAL LOCALITY AND REFERENCE FREQUENCY
Ⅳ. ANALYSIS OF SKEWED PAGE POPULARITY IN MEMORY REFERENCES
Ⅴ. SUMMARY AND IMPLICATIONS
Ⅵ. CONCLUSIONS
REFERENCES
참고문헌 (9)
참고문헌 신청
1. [학술대회논문] - P. Zhou / 2009 / A durable and energy efficient main memory using phase change memory technology / In ISCA09 : 14 ~ 23
2. [학술대회논문] - S. Eilert / 2009 / Phase Change Memory: A new memory technology to enable new memory usage models / IMW09 : 1 ~ 2
3. [학술대회논문] - M.K. Qureshi / 2009 / Scalable high performance main memory system using phase-change memory technology / ISCA09 : 24 ~ 33
4. [학술대회논문] - S. Chung / 2010 / Fully Integrated 54nm STT-RAM with the Smallest Bit Cell Dimension for High Density Memory Application / IEDM : 1 ~ 4
5. [학술지(정기간행물)] - H. Li / 2011 / Performance, Power, and Reliability Tradeoffs of STT-RAM Cell Subject to Architecture-Level Requirement / IEEE Transactions on Magnetics 47 (10) : 2356 ~ 2359
2. [학술대회논문] - S. Eilert / 2009 / Phase Change Memory: A new memory technology to enable new memory usage models / IMW09 : 1 ~ 2
3. [학술대회논문] - M.K. Qureshi / 2009 / Scalable high performance main memory system using phase-change memory technology / ISCA09 : 24 ~ 33
4. [학술대회논문] - S. Chung / 2010 / Fully Integrated 54nm STT-RAM with the Smallest Bit Cell Dimension for High Density Memory Application / IEDM : 1 ~ 4
5. [학술지(정기간행물)] - H. Li / 2011 / Performance, Power, and Reliability Tradeoffs of STT-RAM Cell Subject to Architecture-Level Requirement / IEEE Transactions on Magnetics 47 (10) : 2356 ~ 2359
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