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초록·키워드
Purpose: Fluorine doped tin oxide (FTO) bottom electrode for Ta₂O<SUB>5</SUB> based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability.
Methods: ITO/Ta₂O<SUB>5</SUB>/FTO (ITF) and ITO/Ta₂O<SUB>5</SUB>/Pt (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared.
Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V).
Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with Ta₂O<SUB>5</SUB> switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.
Methods: ITO/Ta₂O<SUB>5</SUB>/FTO (ITF) and ITO/Ta₂O<SUB>5</SUB>/Pt (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared.
Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V).
Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with Ta₂O<SUB>5</SUB> switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.
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UCI(KEPA) : I410-ECN-0101-2016-323-002731187
