인문학
사회과학
자연과학
공학
의약학
농수해양학
예술체육학
복합학
DBpia AI
AI 에이전트
AI 아이디어
AI 리더
AI 뷰어
Citeasy
크롬 서지관리 다운로드
지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록·키워드
Purpose: The purpose of this study was to investigate the effect of grinding process and thickness on the fracture strength of silicon die used for semiconductor substrate.
Method: Silicon wafers with different thickness from 200 μm to 50 μm were prepared by chemical mechanical polishing (CMP) and dicing before grinding (DBG) process, respectively. Fracture load was measured by point load test for 50 silicon dies per each wafer.
Results: Fracture strength at the center area was lower than that at the edge area of the wafer fabricated by DBG process, while random distribution of the fracture strength was observed for the CMPed wafer. Average fracture strength of DBGed specimens was higher than that of the CMPed ones for the same thickness of wafer.
Conclusion: DBG process can be more helpful for lowering fracture probability during the semiconductor fabrication process than CMP process.
Method: Silicon wafers with different thickness from 200 μm to 50 μm were prepared by chemical mechanical polishing (CMP) and dicing before grinding (DBG) process, respectively. Fracture load was measured by point load test for 50 silicon dies per each wafer.
Results: Fracture strength at the center area was lower than that at the edge area of the wafer fabricated by DBG process, while random distribution of the fracture strength was observed for the CMPed wafer. Average fracture strength of DBGed specimens was higher than that of the CMPed ones for the same thickness of wafer.
Conclusion: DBG process can be more helpful for lowering fracture probability during the semiconductor fabrication process than CMP process.
본문·목차
인공지능 문자 인식 모델을 통해 추출된 텍스트로, 일부 오타나 오류가 포함될 수 있으나 지속적으로 개선 중입니다.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
최근 본 자료 전체보기
UCI(KEPA) : I410-ECN-0101-2016-323-002731218
