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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.9
- 수록면
- 229 - 233 (5page)
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We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.
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참고문헌 (16)
참고문헌 신청
1. [학술지(정기간행물)] - C. Rossel / 2001 / / J. Appl. Phys 90 : 2892 ~
2. [학술지(정기간행물)] - G. Meijer / 2005 / / Phys. Rev. B 72 : 155102 ~
3. [학술지(정기간행물)] - A. Odagawa / 2004 / / Phys. Rev. B 70 : 224403 ~
4. [학술지(정기간행물)] - A. Sawa / 2006 / / Appl. Phys. Lett 88 : 232112 ~
5. [학술지(정기간행물)] - Phan Bach Thang / 2007 / Trap-Controlled Space-Charge-Limited Current Conduction in the Cr-Doped SrTiO3 Thin Films Deposited by Using Pulsed Laser Deposition / Journal of the Korean Physical Society 51 (2I) : 664 ~ 668
2. [학술지(정기간행물)] - G. Meijer / 2005 / / Phys. Rev. B 72 : 155102 ~
3. [학술지(정기간행물)] - A. Odagawa / 2004 / / Phys. Rev. B 70 : 224403 ~
4. [학술지(정기간행물)] - A. Sawa / 2006 / / Appl. Phys. Lett 88 : 232112 ~
5. [학술지(정기간행물)] - Phan Bach Thang / 2007 / Trap-Controlled Space-Charge-Limited Current Conduction in the Cr-Doped SrTiO3 Thin Films Deposited by Using Pulsed Laser Deposition / Journal of the Korean Physical Society 51 (2I) : 664 ~ 668
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UCI(KEPA) : I410-ECN-0101-2017-056-001397587