메뉴 건너뛰기
.. 내서재 .. 알림
소속 기관/학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
로그인 회원가입 고객센터 ENG
주제분류
인문학
인문학 일반 역사학 철학 종교학 어문학 기타 인문학
사회과학
사회과학 일반 경영학 관광학 교육학 군사학 문헌정보학 법학 사회학 신문방송학 심리과학 정치외교학 지리학 행정학 경제학 무역학 인류학 기타 사회과학
자연과학
자연과학 일반 물리학 생물학 생활과학 수학·통계학 천문학 지구과학 화학 기타 자연과학
공학
공학 일반 건축공학 기계공학 산업공학 재료·에너지공학 전기전자공학 조선해양공학 화학공학 컴퓨터학 기타공학
의약학
의학 일반 간호학 수의학 약학 한의학 기초의학 임상의학 기타 의약학
농수해양학
농수해양학 일반 농학 수산학 식품과학 임학 축산학 해상운송학 기타 농수해양학
예술체육학
예술 일반 디자인 미술 미용 사진 음악학 의상 체육 공연매체예술 기타 예술체육학
복합학
학제간연구 과학기술학 뇌인지과학 기술정책 기타 복합학

ENG

추천
검색
질문

논문 기본 정보

자료유형
학술저널
저자정보
Yongbeom Cho (Gachon University) Seongjae Cho (Gachon University) Byung-Gook Park (Seoul National University) James S. Harris (Stanford University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.17 No.5
발행연도
2017.10
수록면
675 - 684 (10page)
DOI
10.5573/JSTS.2017.17.5.675

이용수

표지
📌
연구주제
📖
연구배경
🔬
연구방법
🏆
연구결과
AI에게 요청하기
추천
검색
질문

초록· 키워드

오류제보하기
Ge is on increasing demand in the advanced Si-compatible high-speed integrated circuits due to its high carrier mobilities. In particular, its hole mobility is much higher than those of other group-IV and III-V compound semiconductor materials. At the same time, Ge has the local minimum at the Γ valley, which enables the utilization for optical applications. The fact that Ge becomes a direct-bandgap semiconductor material by applying tensile strain can be a good merit in obtaining higher spontaneous radiation probability. However, engineering the electronic structure of Ge by external mechanical stress through stressors with different thermal expansion coefficients might require a complicated set of processes. Efforts were made to turn it into a direct-bandgap one by incorporating Sn. Carrier mobilities are further enhanced when Sn is substitutionally incorporated into the Ge matrix. Thus, advantageous features are expected in improving both optical and electrical performances. Furthermore, the small bandgap energy and bandgap tunability make Ge<SUB>1-x</SUB>Sn<SUB>x</SUB> alloy a promising material for components making up the optical interconnect on Si platform including optical source of near-infrared wavelength. In this work, we study the electrical and optical characteristics of Ge1-xSnx alloy as a function of Sn content. To achieve this goal, ab initio calculations of energy-band structures of Ge<SUB>1-x</SUB>Sn<SUB>x</SUB> with different Sn fractions have been carried out based on linearized augmented plane wave (LAPW) method with modified Becke-Johnson potential model for more accurate bandgap energy. Then, a novel coding method has been adopted for more reliable overall band structures. The minimum Sn content required for direct- and indirect-bandgap material transition of Ge<SUB>1-x</SUB>Sn<SUB>x</SUB>, electrical and optical energy bandgaps to investigate the bandgap tunability, as well as effective masses, have been extracted as a function of Sn content. The transition point was found to be 6.9% and succinct reductions of effective masses of electron and hole have been confirmed.
#Germanium #Si compatibility #carrier mobility #group IV #electronic structure #GeSn #optical interconnect #ab initio calculation #linearized augmented place wave (LAPW) #effective mass

목차

Abstract
I. INTRODUCTION
II. SIMULATION STRATEGIES
III. RESULTS AND DISCUSSION
IV. CONCLUSION
REFERENCES

참고문헌 (32)

참고문헌 신청
E. G. Friedman, “On-chip interconnect: The past, present, and future,” in Proc. Netw. Chip Workshop, Munich, Germany, Mar. 2006. D. Sylvester, C. Hu, O. S. Nakagawa, and S.-Y. Oh, “Interconnect scaling: Signal integrity and performance in future high-speed CMOS designs,” in Proc. VLSI Symp. Technology, pp. 42?43, Honolulu, USA, Jun. 1998. V. McGahay, “Porous Dielectrics in Microelectronic Wiring Applications,” Mater. vol. 3, no. 1, pp. 536?562, Jan. 2010. A. Ceyhan and A. Naeemi, “Impact of conventional and emerging interconnects on the circuit performance of various Post-CMOS devices,” in Proc. 14th International Symposium on Quality Electronic Design, pp. 203?209, California, USA, 2013. J. W. Goodman, F. J. Leonberger, S.-Y. Kung, and R. A. Athale, “Optical interconnections for VLSI systems,” Proc. IEEE, vol. 72, no. 7, pp. 850?866, Jul. 1984.

함께 읽어보면 좋을 논문

논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!

이 논문의 저자 정보

최근 본 자료

전체보기

댓글(0)

0