메뉴 건너뛰기

ENG

추천
검색
질문

논문 기본 정보

자료유형
학술대회자료
저자정보
(서울대학교) (서울대학교) (서울대학교) (서울대학교) (삼성전자)
저널정보
대한기계학회 대한기계학회 춘추학술대회 대한기계학회 2018년도 학술대회
발행연도
수록면
227 - 230 (4page)

이용수

표지
📌
연구주제
📖
연구배경
🔬
연구방법
이 논문의 연구방법이 궁금하신가요?
🏆
연구결과
이 논문의 연구결과가 궁금하신가요?
AI에게 요청하기
추천
검색
질문

초록· 키워드

Fabrication of photoresist (PR) patterning of extreme ultraviolet lithography (EUVL) toward 10 nm highly relies on fundamental understanding of nanoscale heterogeneity in resist matrix. However, currently reported kinetic models are based on homogeneous volume element, and cannot predict EUVL performance variation under heterogeneous resist component distribution such as molecular agglomeration and line edge surface consisting of polymer chains. In this study, we developed multiscale model, density functional theory (DFT)-molecular dynamics (MD)-finite difference method (FDM) integration, reflecting heterogeneous spatial distribution of material ingredients by downscaling the deprotection unit into single pendant group, and it allowed to investigate photo-triggered chemical reaction in molecular level including photo acid generator (PAG) dissociation by secondary electron attachment, acid diffusioncoupled deprotection and solubility switch of individual polymer chain. To quantify deprotection reaction progress, protecting ratio was assigned to pendant group and tracked to distinguish dissoluble PR chains against developer as the process time elapsed. After wiping out the dissoluble chains, morphology of PR line pattern was predicted in sub-10 nm scale from the full description of photo-triggered chemical reaction.
#EUV lithography(EUV 리소그래피) #photoresist(포토레지스트) #multiscale simulation(멀티스케일 전산모사) #density functional theory(밀도범함수이론) #molecular dynamics(분자동역학) #finite difference method(유한차분법)
상세정보 수정요청해당 페이지 내 제목·저자·목차·페이지
정보가 잘못된 경우 알려주세요!

목차

  1. Abstract
  2. 1. 서론
  3. 2. 방법론
  4. 3. 결과
  5. 4. 결론
  6. 참고문헌

참고문헌

참고문헌 신청

최근 본 자료

전체보기
260319_딥리서치
260319_AI리더
260304_새학기에이전트
260420 이주의질문
260122_AIagent
260304_아그논문롤
260127_아그논문
260127_AI뷰어