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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an Al2O3 substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/Al2O3 substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.
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참고문헌 (15)
참고문헌 신청
H. Kato / 2005 / Polarity control of ZnO on c-plane sapphire by plasma-assisted MBE / J. Cryst. Growth 275 : e2459 ~
H. Tampo / 2005 / Determination of crystallographic polarity of ZnO layers / Appl. Phys. Lett 87 : 141904 ~
J.-H. Lim / 2006 / V electroluminesecence emission from ZnO light-emitting diodes grown by hightemperature radiofrequency sputtering / Adv. Mater 18 : 2720 ~
J.S. Park / 2008 / Growth of polarity-controlled ZnO films on (0001) Al2O3 / JOURNAL OF ELECTRONIC MATERIALS 37 : 736 ~ 742
K. Sakurai / 2000 / Effects of oxygen plasma condition on MBE growth of ZnO / J. Cryst. Growth 209 : 522 ~
H. Tampo / 2005 / Determination of crystallographic polarity of ZnO layers / Appl. Phys. Lett 87 : 141904 ~
J.-H. Lim / 2006 / V electroluminesecence emission from ZnO light-emitting diodes grown by hightemperature radiofrequency sputtering / Adv. Mater 18 : 2720 ~
J.S. Park / 2008 / Growth of polarity-controlled ZnO films on (0001) Al2O3 / JOURNAL OF ELECTRONIC MATERIALS 37 : 736 ~ 742
K. Sakurai / 2000 / Effects of oxygen plasma condition on MBE growth of ZnO / J. Cryst. Growth 209 : 522 ~
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