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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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초록· 키워드
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In this paper, a dynamic range(DR) extension technique based on a 3-transistor active pixel sensor(APS) and dual image sampling is proposed. The feature of the proposed APS is that the APS uses two or more photodiodes with different sensitivities, such as a high-sensitivity photodiode and a low-sensitivity photodiode. Compared with previously proposed wide DR(WDR) APS, the proposed approach has several advantages, such as no-external equipments or signal processing, no-additional time-requirement for additional charge accumulation, simple operation and adjustable DR extension by controlling parasitic capacitance and sensitivity of two photodiodes. Approximately 16 dB of DR extension was evaluated from the simulation for the situation of 10 times of sensitivity difference and the same size of parasitic capacitance between those two photodiodes.
목차
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참고문헌 (13)
참고문헌 신청
A.Gamal / 2002 / Trends in CMOS image sensor technology and design / IEDM Technical Digest : 805 ~ 808
D. D. Yang / 1999 / A 640×512 CMOS image sensor with ultra wide dynamic range floating-point pixel-level ADC / IEEE ISSCC Dig. Tech : 308 ~ 309
E.Fossum / 1997 / CMOS image sensor:Electronic camera-on-a-chip / IEEE Trans. on Electron Devices 44 (10) : 1689 ~ 1698
G. G. Storm / 2004 / Combined linear-logarithmic CMOS image sensor / IEEE ISSCC Dig. Tech : 112 ~ 113
H.-Y. Hyun / 2008 / Low noise logarithmic active pixel sensor using a gate/n-well tied pMOSFET-type photodetector / Sensors and Materials 20 (7) : 381 ~ 387
D. D. Yang / 1999 / A 640×512 CMOS image sensor with ultra wide dynamic range floating-point pixel-level ADC / IEEE ISSCC Dig. Tech : 308 ~ 309
E.Fossum / 1997 / CMOS image sensor:Electronic camera-on-a-chip / IEEE Trans. on Electron Devices 44 (10) : 1689 ~ 1698
G. G. Storm / 2004 / Combined linear-logarithmic CMOS image sensor / IEEE ISSCC Dig. Tech : 112 ~ 113
H.-Y. Hyun / 2008 / Low noise logarithmic active pixel sensor using a gate/n-well tied pMOSFET-type photodetector / Sensors and Materials 20 (7) : 381 ~ 387
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