지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제13권 제3호
- 발행연도
- 2012.1
- 수록면
- 139 - 143 (5page)
이용수
초록· 키워드
오류제보하기
Optical emission spectroscopy (OES) is often used for real-time analysis of the plasma processes. OES has been suggested as a primary plasma process monitoring tool. It has the advantage of non-invasive in-situ monitoring capability but selecting the proper wavelengths for the analysis of OES data generally relies on empirically established methods. In this paper, we propose a practical method for the selection of OES wavelength peaks for the analysis of plasma etch process and this is done by investigating reactants and by-product gas species that reside in the plasma etch chamber. Wavelength selection criteria are based on the standard deviation and correlation coefficients.
Moreover, chemical actinometry is employed for the normalization of the selected wavelengths. We also present the importance of chemical actinometry of OES data for quantitative analysis of plasma. Then, the suggested OES peak selection method is employed.. This method is used to find out the reason behind abnormal etching of PR erosion during a series of SiO2 etch processes using the same recipe. From the experimental verification, we convinced that OES is not only capable for real-time detection of abnormal plasma process but it is also useful for the analysis of suspicious plasma behavior.
목차
등록된 정보가 없습니다.
참고문헌 (10)
참고문헌 신청
이 논문의 저자 정보
최근 본 자료
댓글(0)
0