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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제3호
- 발행연도
- 2015.1
- 수록면
- 151 - 155 (5page)
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We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm-2K-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm-2K-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (Nt), which was determined to be 1.46 × 1012 eV-1cm-3.
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참고문헌 (23)
참고문헌 신청
A. Akkaya / 2014 / Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes / Thin Solid Films 564 : 367 ~ 374
A.N. Saxena / 1969 / Forward current-voltage characteristics of Schottky barriers on n-type silicon / Surface Science 13 (1) : 151 ~ 171
Albert Chawanda / 2012 / Current?voltage temperature characteristics of Au/n-Ge (100) Schottky diodes / Physica B: Condensed Matter 407 (10) : 1574 ~ 1577
Bing-Yue Tsui / 2013 / Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium / Applied Physics Letters 103 (3) : 032104 ~
C. Chui / 2002 / / Tech. Dig. - Int. Electron Devices Meet 464
A.N. Saxena / 1969 / Forward current-voltage characteristics of Schottky barriers on n-type silicon / Surface Science 13 (1) : 151 ~ 171
Albert Chawanda / 2012 / Current?voltage temperature characteristics of Au/n-Ge (100) Schottky diodes / Physica B: Condensed Matter 407 (10) : 1574 ~ 1577
Bing-Yue Tsui / 2013 / Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium / Applied Physics Letters 103 (3) : 032104 ~
C. Chui / 2002 / / Tech. Dig. - Int. Electron Devices Meet 464
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