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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제12권 제4호
- 발행연도
- 2011.1
- 수록면
- 144 - 147 (4page)
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In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a N_2/BCl_3/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = 40℃, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the SiO2 thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results,the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.
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참고문헌 (13)
참고문헌 신청
A. Le Gouil / 2007 / / J. Vac. Sci. Technol 25 (767)
Byung-Hyun Lee / 2008 / A Study on Improvement and Degradation of Si/SiO2 Interface Property for Gate Oxide with TiN Metal Gate / Transactions on Electrical and Electronic Ma
E. Sungauer / 2007 / / J. Vac. Sci. Technol 25 (1640)
G. K. Celler / 2003 / / J. Appl. Phys 93 (4955)
H. D. B. Gottlob / 2006 / / J. Vac. Sci.technol 24 (710)
Byung-Hyun Lee / 2008 / A Study on Improvement and Degradation of Si/SiO2 Interface Property for Gate Oxide with TiN Metal Gate / Transactions on Electrical and Electronic Ma
E. Sungauer / 2007 / / J. Vac. Sci. Technol 25 (1640)
G. K. Celler / 2003 / / J. Appl. Phys 93 (4955)
H. D. B. Gottlob / 2006 / / J. Vac. Sci.technol 24 (710)
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