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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2011.1
- 수록면
- 574 - 577 (4page)
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In this study, we use the 2.5 cm × 7.5 cm soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes.
Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100∼175 W with 25 W steps.
Base pressure was kept by turbo molecular pump at 3.0×10^(-6) torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from 8.1×10^(-2) to 1.2×10^(-3) Ω․㎝. This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.
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