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논문 기본 정보

자료유형
학술저널
저자정보
Chanae Park (Chungbuk National University) Juhwan Kim (Chungbuk National University) Kangil Lee (Chungbuk National University) Suhk Kun Oh (Chungbuk National University) Hee Jae Kang (Chungbuk National University) Nam Seok Park (Chungbuk Health&Science University)
저널정보
한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.24 No.3
발행연도
2015.5
수록면
72 - 76 (5page)

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Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of 100℃, 200℃, 300℃ and 400℃ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below 300℃ had the NiO phase, but, at 400℃, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below 300℃ were about 3.7 eV, but that at 400oC should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below 300℃ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at 400℃ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

목차

I. Introduction
II. Experimental
III. Results and Discussions
IV. Conclusions
References

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