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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.24 No.3
- 발행연도
- 2015.5
- 수록면
- 67 - 71 (5page)
이용수
초록· 키워드
오류제보하기
InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migrationenhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.
목차
I. Introduction
II. Experimental Details
III. Results and Discussion
IV. Conclusion
References
참고문헌 (23)
참고문헌 신청
1. [학술지(정기간행물)] - M. Sugawara / 2004 / / Phys. Rev. B 69 : 235332 ~
2. [학술지(정기간행물)] - J. P. Reithmaier / 2005 / / J. Phys. D: Appl.Phys 38 : 2088 ~
3. [학술지(정기간행물)] - C. Chen / 2011 / / IEEE J.Sel. Topics Quantum Electron 17 : 1167 ~
4. [학술지(정기간행물)] - D. Zhou / 2010 / / Appl. Phys. Lett 96 : 083108 ~
5. [학술지(정기간행물)] - S. K. Ha / 2011 / High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy / Journal of the Korean Physical Society 59 (5) : 3089 ~ 3092
2. [학술지(정기간행물)] - J. P. Reithmaier / 2005 / / J. Phys. D: Appl.Phys 38 : 2088 ~
3. [학술지(정기간행물)] - C. Chen / 2011 / / IEEE J.Sel. Topics Quantum Electron 17 : 1167 ~
4. [학술지(정기간행물)] - D. Zhou / 2010 / / Appl. Phys. Lett 96 : 083108 ~
5. [학술지(정기간행물)] - S. K. Ha / 2011 / High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy / Journal of the Korean Physical Society 59 (5) : 3089 ~ 3092
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UCI(KEPA) : I410-ECN-0101-2019-420-001275522