지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.23 No.3
- 발행연도
- 2014.5
- 수록면
- 139 - 144 (6page)
이용수
초록· 키워드
오류제보하기
GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and NH₃, were injected from a shower head at the top of the chamber; the carrier gases, H₂ or N₂, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using H₂ as a carrier gas instead of N₂, the uniform deposition zone was increased by 20%.
목차
I. Introduction
II. Numerical Modeling Scheme
III. Modeling Results and Discussion
IV. Conclusion
References
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UCI(KEPA) : I410-ECN-0101-2019-420-001275002