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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제20권 제4호
- 발행연도
- 2019.1
- 수록면
- 289 - 298 (10page)
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초록· 키워드
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In this paper, basic theory of novel devices as memristors, their models, and I–V characteristic have been discussed. They can be used in various potential applications related with diff erent areas of engineering are enlisted. Recent application in areas of engineering fi eld is neuromorphic which has been introduced. A memristive device has many advantages: nonvolatility, good scalability, eff ectively no leakage current, and compatibility with CMOS technology and so on. The literature review and future works cover the major fi ndings and mile-stones researches in this fi eld from beginning of the invention.
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참고문헌 (59)
참고문헌 신청
L. Chua / 1971 / Memristor—the missing circuit element / IEEE Trans. Circuit Theory 18:507~519
L. O. Chua / 1976 / Memristive devices and systems / Proc. IEEE 64:209~223
D. B. Strukov / 2008 / The missing memristor found / Nature 453:80~83
S. Kvatinsky / 2013 / Team : threshold adaptive memristor model / IEEE Trans. Circuits Syst. I Regul. Pap 60:211~221
D. Batas / 2011 / A memristor spice implementation and a new approach for magnetic flux-controlled memristor modeling / IEEE Trans. Nanotechnol 10:250~255
L. O. Chua / 1976 / Memristive devices and systems / Proc. IEEE 64:209~223
D. B. Strukov / 2008 / The missing memristor found / Nature 453:80~83
S. Kvatinsky / 2013 / Team : threshold adaptive memristor model / IEEE Trans. Circuits Syst. I Regul. Pap 60:211~221
D. Batas / 2011 / A memristor spice implementation and a new approach for magnetic flux-controlled memristor modeling / IEEE Trans. Nanotechnol 10:250~255
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