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논문 기본 정보

자료유형
학술저널
저자정보
Jun-Kyo Jeong (Chungnam National University) Byeong-Jun Jeong (Chungnam National University) Jae- Sub Oh (National NanoFab Center) Ga-Won Lee (Chungnam National University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.1
발행연도
2020.2
수록면
47 - 54 (8page)
DOI
10.5573/JSTS.2020.20.1.047

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초록· 키워드

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This study analyzes the response time, that is, thermal time constant of an uncooled amorphous silicon (a-Si) infrared (IR) microbolometer cell based on simulation when the device is downscaled for higher resolution. For accurate analysis, an 80´80 array of a-Si microbolometer was fabricated with a 35 μm pixel size. The real device was used to extract the external environmental parameter for the simulation where temperature coefficient of resistance (TCR) of a-Si is also modeled to include temperaturedependence. It is known qualitatively that the cell geometries like as the length of the resistance layer and width of the leg are key factors for the time constant of the device. When the pixel is downscaled to 17 μm, the time constant is found to increase as the length of the resistance layer becomes narrower, but this tendency is reversed for the width of the leg. This is because the influence of each component on the total resistance is changed according to the cell area, which is efficiently optimized by the simulation analysis.

목차

Abstract
I. INTRODUCTION
II. EXPERIMENT
III. SIMULATION RESULTS
IV. CONCLUSIONS
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