A New Method for Defect Prediction of Polycrystalline Silicon TFTs with Realistic Grain Boundary Model

K. H. Kim; J. Y. Lee; Y. G. Yoon; S. K. Kim; H. U. Cho; Y. M. Cho; Y. J. Kim; B. D. Choi

doi:10.5573/JSTS.2020.20.1.093

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자료유형: 학술저널

저자정보: K. H. Kim (Sungkyunkwan University) J. Y. Lee (Sungkyunkwan University) Y. G. Yoon (Sungkyunkwan University) S. K. Kim (Sungkyunkwan University) H. U. Cho (Sungkyunkwan University) Y. M. Cho (Sungkyunkwan University) Y. J. Kim (Sungkyunkwan University) B. D. Choi (Sungkyunkwan University)

저널정보: 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.1

발행연도: 2020.2

수록면: 93 - 98 (6page)

DOI: 10.5573/JSTS.2020.20.1.093

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We investigate the deviation of threshold voltage (V<SUB>th</SUB>) of p-channel polycrystalline silicon thin film transistors (poly-Si TFTs) using a new GB (grain boundary) model that better reflects reality. And we proposed new method for defect prediction using by this new GB model. The new GB model reflects a gaussian distribution of grain size and GB position. And by introducing a new parameter (β) which represents the defect ratio between GB and grain, the Vth deviation that increases as the channel gets shorter can be matched with the actual measurement results. And we found that the increase in the Vth deviation in the short channel becomes larger as the number of defects increases in GB (as the β increases). And we found that the β is an important physical parameter to explain why the Vth deviation of the short channel is rapidly increased. In this way, using this β value in our GB model, it is possible to predict the relative density of defect states of GB in the poly-Si by monitoring the Vth deviation in short channel TFTs in the process of developing polycrystalline TFTs.

#Grain-boundary (GB) #grain #trap state density #short channel TFT #polysilicon #threshold voltage #deviation

참고문헌 (23)

참고문헌 신청

Y. Kuo, “Thin-film transistor and ultra-large scale integrated circuit: Competition or collaboration” , , Jpn. J. Appl. Phys., Vol. 47, No. 3, pp. 1845-1852, Mar. 2008.

H. Y. Lu, T. C. Chang, Y. H. Tai, P. T. Liu, S. Chi, A new pixel circuit compensating for brightness variation in large size and high resolution AMOLED displays, J. Display Technol., Vol. 3, No. 4, pp. 398-403, Dec. 2007.

R. Q. Ma, R. Hewitt, K. Rajan, J. Silvernail, K. Urbanik, M. Hack, J. J. Brown, Flexible active-matrix OLED displays: Challenges and progress, J. Soc. Inf. Display, vol. 16, no. 1, pp. 169-175, Jan. 2008.

Y. H. Yu, Y. J. Lee, Y. H. Li, C. H. Kuo, C. H. Li, Y. J. Hsieh, C. T. Liu, Y. J. E. Chen, An LTPS TFT demodulator for RFID tags embeddable on panel displays, IEEE Trans. Microw. Theory Tech., vol. 57, no. 5, pp. 1356-1361, May 2009. DOI: 10.1109/TMTT.2009.2017312

N. Yamauchi, J.-J. J. Hajjar, and R. Reif, “Polysilicon thin film transistors with channel length and width comparable to or smaller than the grain size of the thin film”, IEEE Trans. Electron Devices, vol. 38, pp. 55-60, Jan. 1991. DOI: 10.1109/16.65736

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