Impact of impurities and annealing conditions on the characteristics of Si/HfO₂:Al/TiN ReRAM devices

Jongseok Woo ,  Changhwan Shin

한국진공학회 학술발표회초록집

2020 .02

Thermal annealing effect on nonvolatile memory characteristics of ZnO/SiOx multilayer ReRAM device and its endurance improvement depending on O₂-gas flow rate during deposition of intermediate ZnO layer

Jisoo Kim ,  Minho Im ,  Jung Hyun Sok 외 2명

한국진공학회 학술발표회초록집

2019 .08

ZnO/SiOx 다층 구조 ReRAM 소자의 메모리 특성에 대한 열처리 효과

김지수 ,  임민호 ,  석중현 외 1명

한국진공학회 학술발표회초록집

2018 .02

Properties of resistive switching in SiO₂/Si/TiO₂ structure by thermal annealing for non-volatile memory

Seungon Song ,  Kyongmin Kim ,  Kyunho Jung 외 3명

한국진공학회 학술발표회초록집

2017 .02

Forming free resistive switching behaviors in oxygenated amorphous carbon layer by ultra- thin atomic metal layer

Da Seul Hyeon ,  Gab ,  ial Jang 외 2명

한국진공학회 학술발표회초록집

2020 .08

Effect of compliance current on resistive switching characteristics of solution-processed HfOx-based resistive switching RAM (ReRAM)

정하동 ,  조원주

한국진공학회 학술발표회초록집

2016 .02

Characteristics of Zinc Silicate-based resistive random access memory

Minho Im ,  Jisoo Kim ,  Junghyun Sok 외 2명

한국진공학회 학술발표회초록집

2018 .02

Bipolar resistive switching in oxygenated amorphous carbon layer

Da seul Hyeon Gab ,  iel Jang ,  Taeyoon Kim 외 1명

한국진공학회 학술발표회초록집

2018 .08

Improvement of Resistive Switching by Stacking Thin HfOx layer on Al-Zn-Sn-O Based ReRAMs

최준영 ,  조원주

한국진공학회 학술발표회초록집

2017 .02

Resistive Switching Effects of Zinc Silicate Thin Films grown by RF-magnetron co-sputtering method for Nonvolatile Memory Applications

Minho Im ,  Jisoo Kim ,  Junghyun Sok 외 2명

한국진공학회 학술발표회초록집

2019 .08

Effects of double-SiO₂ thin-layers insertion on bipolar resistive switching characteristics for nonvolatile memory application

정균호 ,  김경민 ,  송승곤 외 1명

한국진공학회 학술발표회초록집

2017 .02

Low-temperature solution-processed aluminum oxide layers for resistance random access memory on a flexible substrate

신중원 ,  조원주

한국진공학회 학술발표회초록집

2016 .02

Large-area imaging evolution of micro-scale configuration of conducting filaments in resistive switching materials using a light-emitting diode

Keundong Lee ,  Youngbin Tchoe ,  Hosang Yoon 외 7명

한국진공학회 학술발표회초록집

2016 .02

Investigation on Resistive Switching Characteristics of Solution Processed Al doped Zn-Tin Oxide film

황도연 ,  박동철 ,  조원주

한국진공학회 학술발표회초록집

2015 .08

Resistive switching characteristics of Al₂O₃/ZnO thin films for flexible memory applications

Jun ZHU

한국진공학회 학술발표회초록집

2016 .08

Fabrication of Resistive Switching Memory based on Solution Processed AlOx - PMMA Blended Thin Film

신중원 ,  백일진 ,  조원주

한국진공학회 학술발표회초록집

2015 .08

Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices

Sungjun KIM ,  Min-Hwi KIM ,  Tae-Hyeon KIM 외 5명

한국진공학회 학술발표회초록집

2016 .08

Fabrication of resistive switching memory by using MoS₂ layers grown by chemical vapor deposition

Sung Jae Pa ,  k ,  Dong 외 2명

한국진공학회 학술발표회초록집

2016 .02

Effect of si bottom electrode on resistive switching characteristics for Si-compatible 3D vertical memory

Tae-Hyeon KIM ,  Sungjun KIM ,  Min-Hwi KIM 외 3명

한국진공학회 학술발표회초록집

2016 .08

TaO_x 와 TiO_x 를 이용한 RRAM 장치의 특성 비교

이가영 ,  정재훈 ,  전석엽 외 4명

새물리

2019 .10